InAlAs/InGaAs Quantum Well Infrared Photodetectors with 3-5μm Band Grown by Gas Source Molecular Beam Epitaxy
ZHANG Yong-gang, LI Ai-zhen, CHEN Jian-xin, REN Yao-cheng
State Key Laboratory of FUnctional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
InAlAs/InGaAs Quantum Well Infrared Photodetectors with 3-5μm Band Grown by Gas Source Molecular Beam Epitaxy
ZHANG Yong-gang;LI Ai-zhen;CHEN Jian-xin;REN Yao-cheng
State Key Laboratory of FUnctional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
68.55.Bd ,
73.20.Dx ,
78.30.Fs
Abstract ： The relationship between well width and subband energy as well as response wavelength of the InAlAs/InGaAs multi-quantum well structures have been calculated for the design of the devices by using Kronig-Penney model. By using gas source molecular beam epitaxy grown InAlAs/InGaAs quantum well infrared photodetector (QWIP) materials have been used to fabricate QWIP devices with 3-5μm band. I-V characteristics and response spectra of the devices have been measured. Results show that the devices have peak response at 4.0μm with full width of half maximum of about 29.5meV.
Key words ：
68.55.Bd
73.20.Dx
78.30.Fs
出版日期: 1997-06-01
引用本文:
ZHANG Yong-gang;LI Ai-zhen;CHEN Jian-xin;REN Yao-cheng. InAlAs/InGaAs Quantum Well Infrared Photodetectors with 3-5μm Band Grown by Gas Source Molecular Beam Epitaxy[J]. 中国物理快报, 1997, 14(6): 443-445.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I6/443
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