Photoluminescence Characterization of Nanocrystalline ZnO Array
CHANG Yong-Qin1,2, YU Da-Peng1, LI Guo-Hua3, FANG Zai-Li3, ZHANG Ye1, CHEN Yao-Feng1, YANG FU-Hua3
1Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871
2School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
3National Laboratory of Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Photoluminescence Characterization of Nanocrystalline ZnO Array
1Department of Physics, National Key Laboratory of Mesoscopic Physics, and Electron Microscopy Laboratory, Peking University, Beijing 100871
2School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
3National Laboratory of Superlattices & Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Abstract： High-density and uniform well-aligned ZnO sub-micron rods are synthesized on the silicon substrate over a large area. The morphology and structure of the ZnO sub-micron rods are investigated by x-ray diffraction, transmission electron microscopy and Raman spectra. It is found that the ZnO sub-micron rods are of high crystal quality with the diameter in the range of 400--600 nm and the length of several micrometres long. The optical properties were studied by photoluminescence spectra. The results show that the intensity of the ultraviolet emission at 3.3 eV is rather high, meanwhile the deep level transition centred at about 2.38 eV is weak. The free exciton emission could also be observed at low temperature, which implies the high optical quality of the ZnO sub-micron rods. This growth technique provides one effective way to fabricate the high crystal quality ZnO nanowires array, which is very important for potential applications in the new-type optoelectronic nanodevices.
2004, Vol. 21 
