Fractal Aggregation Behavior in Amorphous Silicon Nitride Films
YE Chao, NING Zhao-yuan, GUO Yu-hua1 , WANG Xiang-ying1 , XIN Yu, WANG Yuan-chang1 , SHEN Ming-rong, WANG Hao
Laboratory of Films Materials, Department of Physics, Suzhou University, Suzhou 215006
1 Department of Electron Microscope, Suzhou Medical College, Suzhou 215007
Fractal Aggregation Behavior in Amorphous Silicon Nitride Films
YE Chao;NING Zhao-yuan;GUO Yu-hua1 ;WANG Xiang-ying1 ;XIN Yu;WANG Yuan-chang1 ;SHEN Ming-rong;WANG Hao
Laboratory of Films Materials, Department of Physics, Suzhou University, Suzhou 215006
1 Department of Electron Microscope, Suzhou Medical College, Suzhou 215007
关键词 ：
68.55.Jk ,
61.43.Hv ,
73.50.Mx
Abstract ： A fractal aggregation behavior in amorphous silicon nitride (Six Ny ) films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition is reported. The fractal structure and dimension of 1.45 obtained by experiment and computer simulation are all in excellent agreement with the result predicted by the cluster-cluster-aggregation model. The forming of fractal structure is related to the change of discharge mode between ring plasma and bulk plasma.
Key words ：
68.55.Jk
61.43.Hv
73.50.Mx
出版日期: 1997-06-01
:
68.55.Jk
61.43.Hv
(Fractals; macroscopic aggregates (including diffusion-limited Aggregates))
73.50.Mx
(High-frequency effects; plasma effects)
引用本文:
YE Chao;NING Zhao-yuan;GUO Yu-hua;WANG Xiang-ying;XIN Yu;WANG Yuan-chang;SHEN Ming-rong;WANG Hao. Fractal Aggregation Behavior in Amorphous Silicon Nitride Films[J]. 中国物理快报, 1997, 14(6): 446-448.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I6/446
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