Dopant Effects on Defects in GaN Films Grown by Metal-Organic
Chemical Vapor Deposition
LU Min, YANG Hua, LI Zi-Lan, YANG Zhi-Jian, LI Zhong-Hui, REN Qian, JIN Chun-Lai, LU Shu, ZHANG Bei, ZHANG Guo-Yi
School of Physics and Center for Wide Band-Gap Research, Peking
University, Beijing 100871
State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Beijing 100871
Dopant Effects on Defects in GaN Films Grown by Metal-Organic
Chemical Vapor Deposition
School of Physics and Center for Wide Band-Gap Research, Peking
University, Beijing 100871
State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Beijing 100871
Abstract： The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet etching of pits, x-ray diffraction and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample. The effects of the dopants on the etching pits were discussed.
LU Min;YANG Hua;LI Zi-Lan;YANG Zhi-Jian;LI Zhong-Hui;REN Qian;JIN Chun-Lai;LU Shu;ZHANG Bei;ZHANG Guo-Yi. Dopant Effects on Defects in GaN Films Grown by Metal-Organic
Chemical Vapor Deposition[J]. 中国物理快报, 2003, 20(9): 1552-1553.
LU Min, YANG Hua, LI Zi-Lan, YANG Zhi-Jian, LI Zhong-Hui, REN Qian, JIN Chun-Lai, LU Shu, ZHANG Bei, ZHANG Guo-Yi. Dopant Effects on Defects in GaN Films Grown by Metal-Organic
Chemical Vapor Deposition. Chin. Phys. Lett., 2003, 20(9): 1552-1553.
2003, Vol. 20 
