Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment
YIN Min1,2, LOU Li-ren2, FU Zhu-xi2
1Structure Research Laboratory, University of Science and Technology of China and Chinese Academy of Sciences, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026
Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment
YIN Min1,2;LOU Li-ren2;FU Zhu-xi2
1Structure Research Laboratory, University of Science and Technology of China and Chinese Academy of Sciences, Hefei 230026
2Department of Physics, University of Science and Technology of China, Hefei 230026
Abstract： A new method for metalorganic chemical vapor deposition (MOCVD) of GaAs on Si substrates is developed. Instead of the usual high temperature surface cleaning treatment for Si substrate, the new method uses room temperature HF vapor polishing in the preparation chamber in the MOCVD system as the first step of the growth. Single crystal GaAs layers with mirror-like surfaces were obtained.
YIN Min;LOU Li-ren;FU Zhu-xi. Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment[J]. 中国物理快报, 1997, 14(9): 690-693.
YIN Min, LOU Li-ren, FU Zhu-xi. Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment. Chin. Phys. Lett., 1997, 14(9): 690-693.
1997, Vol. 14 
