Extremely Narrow Sb Delta-Doped Epitaxial Layer Characterized by X-Ray Reflectivity
JIANG Zui-min1, XIU Li-song2, JIANG Xiao-ming2, ZHENG Wen-li2, LU Xue-kun3, ZHU Hai-jun3, ZHANG Xiang-jiu3, WANG Xun3
1Fudan T. D. Lee Physics Laboratory, Surface Physics Laboratory, fudan University, Shanghai 200433
2Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
3Surface Physics Laboratory, Fudan University, Shanghai 200433
Extremely Narrow Sb Delta-Doped Epitaxial Layer Characterized by X-Ray Reflectivity
1Fudan T. D. Lee Physics Laboratory, Surface Physics Laboratory, fudan University, Shanghai 200433
2Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
3Surface Physics Laboratory, Fudan University, Shanghai 200433
Abstract： An Sb delta doping layer in silicon is grown at the temperature of 300°C by silicon molecular beam epitaxy and characterized by the small angle x-ray reflectivity measurement using synchrotron radiation beam. The oscillations of the reflectivity caused by dopant Sb at Q as large as 14.5 are detected. Simulation of this curve as a whole shows that the total amount of dopant Sb is 0.15 monolayer and is restricted to two atomic layers. An extremely narrow Sb delta doping structure without Sb segregation is thus obtained at the growth temperature of 300°C as verified by the experiment.
1997, Vol. 14 
