Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition
YU Wei, WANG Bao-Zhu, LU Wan-Bing, YANG Yan-Bin, HAN Li, FU Guang-Sheng
College of Physical Science and Technology, Hebei University, Baoding 071002
Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition
YU Wei;WANG Bao-Zhu;LU Wan-Bing;YANG Yan-Bin;HAN Li;FU Guang-Sheng
College of Physical Science and Technology, Hebei University, Baoding 071002
关键词 ：
68.55.-a ,
68.12.Rx
Abstract ： Nanocrystalline silicon (nc-Si) thin films have been prepared by a helicon-wave plasma chemical vapour deposition technique on glass-Si substrates. The structural properties and the surface morphology are characterized by Raman spectroscopy, x-ray diffraction and atomic force microscopy. It is proven that the deposited films have the features of high crystalline fraction and large grain size compared with that in the normal plasma-enhanced chemical vapour deposition regime. The crystalline fraction of the deposited films varying from 0% to 72% can be obtained by adjusting the substrate temperature.
Key words ：
68.55.-a
68.12.Rx
出版日期: 2004-07-01
引用本文:
YU Wei;WANG Bao-Zhu;LU Wan-Bing;YANG Yan-Bin;HAN Li;FU Guang-Sheng. Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition[J]. 中国物理快报, 2004, 21(7): 1320-1322.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I7/1320
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2004, Vol. 21 
