Preparation and Properties of GaN Films on GaAs Substrates
YANG Ying-Ge1, MA Hong-Lei2, MA Jin2, ZHANG Ya-Fei1
1Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Research Institute for Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030
2School of Physics and Microelectronics, Shandong University, Jinan 250100
Preparation and Properties of GaN Films on GaAs Substrates
YANG Ying-Ge1;MA Hong-Lei2;MA Jin2;ZHANG Ya-Fei1
1Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Research Institute for Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030
2School of Physics and Microelectronics, Shandong University, Jinan 250100
Abstract： Polycrystalline gallium nitride films with hexagonal structure were prepared by a post-nitridation technique. A strong blue photoluminescence located at 458 nm and a UV photoluminescence located at 368 nm were observed at room temperature. The 368 nm peak is PL from band-edge emission. The blue luminescence is attributed to the transition from deep donor level to the valence band.
YANG Ying-Ge;MA Hong-Lei;MA Jin;ZHANG Ya-Fei. Preparation and Properties of GaN Films on GaAs Substrates
[J]. 中国物理快报, 2004, 21(5): 955-957.
YANG Ying-Ge, MA Hong-Lei, MA Jin, ZHANG Ya-Fei. Preparation and Properties of GaN Films on GaAs Substrates
. Chin. Phys. Lett., 2004, 21(5): 955-957.
2004, Vol. 21 
