Structural and Optical Characteristics of InGaN/GaN Multi-Quantum Wells Grown on a- and c-Plane Sapphire Substrates
YU Hong-Bo, CHEN Hong, LI Dong-Sheng, ZHOU Jun-Ming
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
Structural and Optical Characteristics of InGaN/GaN Multi-Quantum Wells Grown on a- and c-Plane Sapphire Substrates
YU Hong-Bo;CHEN Hong;LI Dong-Sheng;ZHOU Jun-Ming
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
关键词 ：
68.65.Fg ,
78.67.De
Abstract ： We investigate the structural and optical properties of InGaN-based multi-quantum wells grown on a-c plane sapphire substrates by atomic force microscopy, high-resolution x-ray diffraction and temperature-dependent photoluminescence measurements. The multi-quantum wells grown on a-plane sapphire substrate show stronger exciton localization effect compared with that grown on the c-plane substrate, although the threading dislocation densities in the two samples are almost the same. We attribute the results to the different in-plane strain of quantum well grown on different substrate orientations at the same growth temperature. Since the exciton localization effect plays a key role to obtain high efficiency InGaN-based optoelectronics devices, the presented result should be emphasized.
Key words ：
68.65.Fg
78.67.De
出版日期: 2004-07-01
引用本文:
YU Hong-Bo;CHEN Hong;LI Dong-Sheng;ZHOU Jun-Ming. Structural and Optical Characteristics of InGaN/GaN Multi-Quantum Wells Grown on a- and c-Plane Sapphire Substrates[J]. 中国物理快报, 2004, 21(7): 1323-1326.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I7/1323
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2004, Vol. 21 
