Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films
HAN Wei-qiang1,2 , HAN Gao-rong1 , FAN Shou-shan2 , GU Bing-lin2
1 Department of Materials, Zhejiang University, Hangzhou 310027
2 Department of Physics, Tsinghua University, Beijing 100084
Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films
HAN Wei-qiang1,2 ;HAN Gao-rong1 ;FAN Shou-shan2 ;GU Bing-lin2
1 Department of Materials, Zhejiang University, Hangzhou 310027
2 Department of Physics, Tsinghua University, Beijing 100084
关键词 ：
61.16.-d ,
81.15.Gh
Abstract ： Hydrogenated nanocrystalline silicon nitrogen (nc-SiNx :H) films were prepared by rf glow discharge of gas mixture of silane (SiH4 ) and nitrogen (N2 ) diluted heavily by hydrogen (H2 ). The effect of the gas volume ratios Xg of (SiU4 +N2 )/H2 and XN ) of N2 /SiH4 on the crystallization and composition of films is described. The growth process and crystallization mechanism of nc-SiNx :H films are discussed in detail.
Key words ：
61.16.-d
81.15.Gh
出版日期: 1997-09-01
:
61.16.-d
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
HAN Wei-qiang;HAN Gao-rong;FAN Shou-shan;GU Bing-lin. Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films[J]. 中国物理快报, 1997, 14(9): 682-685.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I9/682
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