Low-Temperature Growth of Polycrystalline Silicon Films by
SiCl<suB>4</suB>/H<suB>2</suB> rf Plasma Enhanced Chemical Vapor Deposition

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	LIN Xuan-Ying
	HUANG Chuang-Jun
	LIN Kui-Xun
	YU Yun-Peng
	YU Chu-Ying
	CHI Ling-Fei

关键词 ： 81.15.Gh, 81.10.Jt, 68.55.Nq

Abstract： Polycrystalline silicon film was directly fabricated at 200°C by the conventional plasma enhanced chemical vapor deposition method from SiCl₄ with H₂ dilution. The crystallization depends strongly on the deposition power. The maximum crystallinity and the crystalline grain size are over 80% and 200-500 nm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical etching, in-situ chemical cleaning, and the detachment of bonded H.

Key words： 81.15.Gh 81.10.Jt 68.55.Nq

出版日期: 2003-10-01

:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.10.Jt	(Growth from solid phases (including multiphase diffusion and recrystallization))
	68.55.Nq	(Composition and phase identification)

引用本文:

LIN Xuan-Ying;HUANG Chuang-Jun;LIN Kui-Xun;YU Yun-Peng;YU Chu-Ying;CHI Ling-Fei. Low-Temperature Growth of Polycrystalline Silicon Films by SiCl₄/H₂ rf Plasma Enhanced Chemical Vapor Deposition [J]. 中国物理快报, 2003, 20(10): 1879-1882.
LIN Xuan-Ying, HUANG Chuang-Jun, LIN Kui-Xun, YU Yun-Peng, YU Chu-Ying, CHI Ling-Fei. Low-Temperature Growth of Polycrystalline Silicon Films by SiCl₄/H₂ rf Plasma Enhanced Chemical Vapor Deposition . Chin. Phys. Lett., 2003, 20(10): 1879-1882.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2003/V20/I10/1879