Diffusion of Ion Implanted As in Si1-x Gex Epilayers
ZOU Lü-fan, WANG Zhan-guo, SUN Dian-zhao, FAN Ti-wen, LIU Xue-feng, ZHANG Jing-wei
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Diffusion of Ion Implanted As in Si1-x Gex Epilayers
ZOU Lü-fan;WANG Zhan-guo;SUN Dian-zhao;FAN Ti-wen;LIU Xue-feng;ZHANG Jing-wei
Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
66.30.Jt ,
68.55.Ln
Abstract ： Diffusion of implanted As ion in relaxed Si1-x Gex was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.
Key words ：
66.30.Jt
68.55.Ln
出版日期: 1997-01-01
:
66.30.Jt
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
引用本文:
ZOU Lü-fan;WANG Zhan-guo;SUN Dian-zhao;FAN Ti-wen;LIU Xue-feng;ZHANG Jing-wei. Diffusion of Ion Implanted As in Si1-x Gex Epilayers[J]. 中国物理快报, 1997, 14(1): 51-54.
1-x Gex Epilayers. Chin. Phys. Lett., 1997, 14(1): 51-54.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I1/51
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