Unibond Synthesis of Silicon on Insulator Material
ZHANG Miao, ZHU Shi-yang1,2, LI Jin-hua3, NI Ru-shan1, LIN Cheng-lu1
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
2Department of Electronic Engineering, Fudan University, Shanghai 200050
Jiangsu Petrochemical Industry College, Changzhou 213016
Unibond Synthesis of Silicon on Insulator Material
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
2Department of Electronic Engineering, Fudan University, Shanghai 200050
Jiangsu Petrochemical Industry College, Changzhou 213016
Abstract： High quality silicon on insulator (SOI) materials have been successfully produced using the unibond method, a new member of SOI technology. The quality of SOI samples has been investigated by using cross-section transmission electron microscopy, Rutherford backscattering and channeling spectrometry and spreading resistance probe technology. Experimental results indicate that both the thickness uniformity and the crystalline quality of the top Si layer are good. The interface between the top Si layer and SiO2 buried layer is very sharp and straight.
1997, Vol. 14 
