Stable Structure of the Sb Monolayer on a Strained Ge(111) Substrate

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	CAO Yi-Gang
	JIAO Zheng-Kuan
	A. Antons
	K. Schroeder
	S.Blügel

关键词 ： 68.35.-p, 68.55.-a

Abstract： Using an ab initio total energy and force method, we have investigated the stability of different structures of Ge(111):Sb(1 ML) as a function of the lateral lattice constant. We find that the (2 x 1)-reconstruction of Ge(111):Sb experimentally found to be stable at the equilibrium lattice constant of Ge is also the stable structure for slightly dilated Ge films (< 1%), while for larger dilatations the (1 x 1)-structure becomes stable. For compressed Ge films the (√3 x √3)T₄-structure (found experimentally on Si(111):Sb) becomes competitive and it is stable for the lattice constants compressed larger than 5\%. Furthermore, we find that for each structure, the equilibrium lattice constant is different from the bulk Ge crystal. Our results are helpful for understanding of surfactant mediated island growth on strained films.

Key words： 68.35.-p 68.55.-a

出版日期: 2002-02-01

:	68.35.-p	(Solid surfaces and solid-solid interfaces: structure and energetics)
	68.55.-a	(Thin film structure and morphology)

引用本文:

CAO Yi-Gang;JIAO Zheng-Kuan;A. Antons;K. Schroeder; S.Blügel . Stable Structure of the Sb Monolayer on a Strained Ge(111) Substrate[J]. 中国物理快报, 2002, 19(2): 259-261.
CAO Yi-Gang, JIAO Zheng-Kuan, A. Antons, K. Schroeder, S.Blügel . Stable Structure of the Sb Monolayer on a Strained Ge(111) Substrate. Chin. Phys. Lett., 2002, 19(2): 259-261.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2002/V19/I2/259