Preparation and Characterization of GaN Nanowires
XUE Cheng-Shan1 , YANG Ying-Ge2 , MA Hong-Lei2 , ZHUANG Hui-Zhao1 , MA Jin2
1 Institute of Semiconductor, Shandong Normal University, Jinan 250014
2 School of Physics and Microelectronics, Shandong University, Jinan 250100
Preparation and Characterization of GaN Nanowires
XUE Cheng-Shan1 ;YANG Ying-Ge2 ;MA Hong-Lei2 ;ZHUANG Hui-Zhao1 ;MA Jin2
1 Institute of Semiconductor, Shandong Normal University, Jinan 250014
2 School of Physics and Microelectronics, Shandong University, Jinan 250100
关键词 ：
78.55.Cr ,
74.25.Gz ,
61.16.Bg
Abstract ： GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission electron microscopy and scanning electron microscopy. A strong blue photoluminescence is observed for room-temperature measurement, which attributes to electron transition from DX center to valence band.
Key words ：
78.55.Cr
74.25.Gz
61.16.Bg
出版日期: 2003-04-01
引用本文:
XUE Cheng-Shan;YANG Ying-Ge;MA Hong-Lei;ZHUANG Hui-Zhao;MA Jin. Preparation and Characterization of GaN Nanowires[J]. 中国物理快报, 2003, 20(4): 568-570.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I4/568
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2003, Vol. 20 
