Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grown by Molecular Beam Epitaxy
LÜ You-Ming, SHEN De-Zhen, LIU Yi-Chun, LI Bing-Hui, LIANG Hong-Wei, ZHANG Ji-Ying, FAN Xi-Wu
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022
Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grown by Molecular Beam Epitaxy
LÜ You-Ming;SHEN De-Zhen;LIU Yi-Chun;LI Bing-Hui;LIANG Hong-Wei;ZHANG Ji-Ying;FAN Xi-Wu
Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022
关键词 :
63.22.+m ,
81.15.Hi ,
78.55.-m ,
68.65.+g
Abstract : OWe study the optical properties of ZnCdSe/ZnMgSe multiple quantum wells using photoluminescence (PL) and Raman scattering spectra. In the PL spectra, an intense emission band coming from free exciton luminescence of the quantum wells can be observed from 80 K to 300 K. The exciton binding energy is evaluated by the dependence of PL intensity on the temperature, showing the behaviour of the better two-dimensional excitons. The result indicates that the enhancement of the confinement effect is due to containing Mg in the barrier layers. At room temperature, Raman scattering spectra are classified into the confined optical modes and folded optical modes. This confirms the formation of a multilayer system with a higher crystalline quality.
Key words :
63.22.+m
81.15.Hi
78.55.-m
68.65.+g
出版日期: 2002-08-01
引用本文:
LÜYou-Ming;SHEN De-Zhen;LIU Yi-Chun;LI Bing-Hui;LIANG Hong-Wei;ZHANG Ji-Ying;FAN Xi-Wu. Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grown by Molecular Beam Epitaxy[J]. 中国物理快报, 2002, 19(8): 1152-1154.
LÜ, You-Ming, SHEN De-Zhen, LIU Yi-Chun, LI Bing-Hui, LIANG Hong-Wei, ZHANG Ji-Ying, FAN Xi-Wu. Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grown by Molecular Beam Epitaxy. Chin. Phys. Lett., 2002, 19(8): 1152-1154.
链接本文:
https://cpl.iphy.ac.cn/CN/
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https://cpl.iphy.ac.cn/CN/Y2002/V19/I8/1152
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