Characteristics of Shallow Electron Traps in Cubic AgCl Microcrystals Doped with K4 Fe(CN)6
LI Xiao-Wei, GENG Ai-Cong, YANG Shao-Peng, HAN Li, FU Guang-Sheng
College of Physics Science and Technology, Hebei University,
Baoding 071002
Characteristics of Shallow Electron Traps in Cubic AgCl Microcrystals Doped with K4 Fe(CN)6
LI Xiao-Wei;GENG Ai-Cong;YANG Shao-Peng;HAN Li;FU Guang-Sheng
College of Physics Science and Technology, Hebei University,
Baoding 071002
关键词 ：
61.72.Bb ,
68.55.Ln ,
82.20.Pm ,
33.60.Cv
Abstract ： A model is proposed to describe the photoelectron decay process at room temperature in cubic AgCl microcrystals homogeneously doped with K4 Fe(CN)6 . By combining calculation of the kinetic equations resulted from the model with a microwave absorption dielectric-spectrum measuring technique, the capture cross-section and the trap depth of shallow electron traps induced by [Fe(CN)6 ]4- at room temperature are obtained, which are 3.560 x 10-17 cm2 and 0.115 eV, respectively. Based on the two parameters, the optimal doping amount of K4 Fe(CN)6 is easily gained to be 2 ppm by computer calculation.
Key words ：
61.72.Bb
68.55.Ln
82.20.Pm
33.60.Cv
出版日期: 2003-08-01
:
61.72.Bb
(Theories and models of crystal defects)
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
82.20.Pm
(Rate constants, reaction cross sections, and activation energies)
33.60.Cv
引用本文:
LI Xiao-Wei;GENG Ai-Cong;YANG Shao-Peng;HAN Li;FU Guang-Sheng. Characteristics of Shallow Electron Traps in Cubic AgCl Microcrystals Doped with K4 Fe(CN)6 [J]. 中国物理快报, 2003, 20(8): 1323-1325.
4 Fe(CN)6 . Chin. Phys. Lett., 2003, 20(8): 1323-1325.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I8/1323
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2003, Vol. 20 
