X-Ray Photoelectron Spectroscopy Analysis of the Electron Beam
Treated SiC Films Before and After Hydrogen Ion Irradiation
HUANG Ning-Kang, WANG De-Zhi, ZHOU Ping, XIONG QI
Key Laboratory for Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
X-Ray Photoelectron Spectroscopy Analysis of the Electron Beam
Treated SiC Films Before and After Hydrogen Ion Irradiation
HUANG Ning-Kang;WANG De-Zhi;ZHOU Ping;XIONG QI
Key Laboratory for Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
Abstract： SiC films deposited with rf magnetron sputtering followed by electron beam alloying were irradiated by hydrogen ion with an energy of 5 keV and a dose of 1 x 1018 ions/cm2. The x-ray photoelectron spectroscopy analysis was used to investigate the irradiation effects of hydrogen ion on SiC. The results show that hydrogen ion irradiation can cause preferential sputtering of component of SiC, and activated carbon can react chemically with hydrogen to form hydrocarbon species such as methane. The related mechanism is discussed.
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
引用本文:
HUANG Ning-Kang;WANG De-Zhi;ZHOU Ping;XIONG QI. X-Ray Photoelectron Spectroscopy Analysis of the Electron Beam
Treated SiC Films Before and After Hydrogen Ion Irradiation[J]. 中国物理快报, 2004, 21(1): 61-64.
HUANG Ning-Kang, WANG De-Zhi, ZHOU Ping, XIONG QI. X-Ray Photoelectron Spectroscopy Analysis of the Electron Beam
Treated SiC Films Before and After Hydrogen Ion Irradiation. Chin. Phys. Lett., 2004, 21(1): 61-64.
2004, Vol. 21 
