Origin of the Blue Luminescence in Porous Anodic Alumina Films Formed in Oxalic Acid Solutions
GAO Tao, MENG Guo-Wen, ZHANG Li-De
Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031
Origin of the Blue Luminescence in Porous Anodic Alumina Films Formed in Oxalic Acid Solutions
GAO Tao;MENG Guo-Wen;ZHANG Li-De
Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031
关键词 ：
68.55.Ln ,
78.55.Mb
Abstract ： Photoluminescence spectra of porous anodic alumina (PAA) films formed in oxalic acid solutions show a blue emission band peaked around 470 nm, in which the corresponding excitation bands locate at 248 nm, 304 nm, and 360 nm, respectively. With the help of ascertaining the mechanism of this blue luminescence, the roles of the oxalic ions on the optical properties of the PAA films was discussed by using optical absorption spectra. It is suggested that the oxalic impurities with different existing or distributing forms would play important roles on the optical properties of PAA films. The 470-nm blue luminescence band could be attributed to the incorporated oxalic impurities rather than the F+ centers existed in the PAA films formed in oxalic acid solutions.
Key words ：
68.55.Ln
78.55.Mb
出版日期: 2003-05-01
:
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
78.55.Mb
(Porous materials)
引用本文:
GAO Tao;MENG Guo-Wen;ZHANG Li-De. Origin of the Blue Luminescence in Porous Anodic Alumina Films Formed in Oxalic Acid Solutions[J]. 中国物理快报, 2003, 20(5): 713-716.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I5/713
[1]
ZHOU Zhu-Wen;M. A. LIEBERMAN;Sungjin KIM. Instability Parameters of Optical Oscillation Frequency in Plasma Central Discharge and Periphery Region
[2]
XU Wei-Wei;DAI Song-Yuan; HU Lin-Hua;LIANG Lin-Yun;WANG Kong-Jia. Influence of Yb-Doped Nanoporous TiO2 Films on Photovoltaic Performance of Dye-Sensitized Solar Cells
[3]
ZHAO Bo;LI Qing-Shan;QI Hong-Xia;ZHANG Ning. White Light Emission from the Composite System of ZnO/Porous Si
[4]
ZHANG Ji-Cheng;LIU Li;SONG Kao-Ping. Neural Approach for Calculating Permeability of Porous Medium
[5]
JING Shi-Wei;LIU Yi-Chun;LIANG Yu;MA Jian-Gang;LU You-Ming;SHEN De-Zhen;ZHANG Ji-Ying;FAN Xi-Wu;MU Ri-Xiang. Compositional and Structural Properties of TiO2-x Nx Thin Films Deposited by Radio-Frequency Magnetron Sputtering
[6]
YAN Feng-Ping;JIAN Shui-Sheng;WANG Lin;Kenichi OGATA;Kazuto KOIKE;Shigehiko SASA;Masatake INOUE;Mitsuaki YANO;. Measurement of Mg Content in Zn1-x Mgx O Films by Electron Probe Microanalysis
[7]
PENG Cheng-Xiao;WENG Hui-Min;YANG Xiao-Jie;YE Bang-Jiao;CHENG Bin;ZHOU Xian-Yi;HAN Rong-Dian. Dependence of Intrinsic Defects in ZnO Films on Oxygen Fraction Studied by Positron Annihilation
[8]
LI Wei;MA Zhong-Quan;WANG Ye;WANG De-Ming. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition
[9]
ZHOU Qian;DONG Peng;YI Gui-Yun;LIU Li-Xia;CHENG Bing-Ying. Preparation of TiO2 Inverse Opal via a Modified Filling Process
[10]
XIANG Wen-Feng;LU Hui-Bin;CHEN Zheng-Hao;HE Meng;LU Xu-Bing;LIU Li-Feng;GUO Hai-Zhong;ZHOU Yue-Liang. N-Doped LaAlO3 /Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability
[11]
HUANG Ning-Kang;WANG De-Zhi;ZHOU Ping;XIONG QI. X-Ray Photoelectron Spectroscopy Analysis of the Electron Beam
Treated SiC Films Before and After Hydrogen Ion Irradiation
[12]
LI Xiao-Wei;GENG Ai-Cong;YANG Shao-Peng;HAN Li;FU Guang-Sheng. Characteristics of Shallow Electron Traps in Cubic AgCl Microcrystals Doped with K4 Fe(CN)6
[13]
ZHOU Xiao-Ying;SUN Chang-Zheng;GUO Wen-Ping;HU Hui;LUO Yi. Photoluminescence of Mg-doped GaN with Different Mg Concentrations After Annealing at Different Temperatures
[14]
FANG Zhi-Dan;GONG Zheng;MIAO Zhen-Hua;XU Xiao-Hua;NI Hai-Qiao;NIU Zhi-Chuan. Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer
[15]
LI Hong-Jian;PENG Jing-Cui;QU Shu;YAN Yong-Hong;XU Xue-Mei;ZHAO Chu-Jun. Efficient Visible Electroluminescence from Porous Silicon Diodes Passivated by Carbon Films
2003, Vol. 20 
