Effective Stress Reduction in Diamond Films on Alumina by
Carbon Ion Implantation

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	FANG Zhi-Jun
	XIA Yi-Ben
	WANG Lin-Jun
	ZHANG Wei-Li
	MA Zhe-Guo
	ZHANG Ming-Long

关键词 ： 62.40.+i, 68.55.Ln, 78.30.-j, 81.05.Tp, 81.05.Je

Abstract： We show the effective stress reduction in diamond films by implanting carbon ions into alumina substrates prior to the diamond deposition. Residual stresses in the films are evaluated by Raman spectroscopy and a more reliable method for stress determination is presented for the quantitative measurement of stress evolution. It is found that compressive stresses in the diamond films can be partly offset by the compressive stresses in the alumina substrates, which are caused by the ion pre-implantation. At the same time, the difference between the offset by the pre-stressed substrates and the total stress reduction indicates that some other mechanisms are also active.

Key words： 62.40.+i 68.55.Ln 78.30.-j 81.05.Tp 81.05.Je

出版日期: 2002-11-01

:	62.40.+i	(Anelasticity, internal friction, stress relaxation, and mechanical resonances)
	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	78.30.-j	(Infrared and Raman spectra)
	81.05.Tp
	81.05.Je	(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))

引用本文:

FANG Zhi-Jun;XIA Yi-Ben;WANG Lin-Jun;ZHANG Wei-Li;MA Zhe-Guo;ZHANG Ming-Long. Effective Stress Reduction in Diamond Films on Alumina by Carbon Ion Implantation[J]. 中国物理快报, 2002, 19(11): 1663-1665.
FANG Zhi-Jun, XIA Yi-Ben, WANG Lin-Jun, ZHANG Wei-Li, MA Zhe-Guo, ZHANG Ming-Long. Effective Stress Reduction in Diamond Films on Alumina by Carbon Ion Implantation. Chin. Phys. Lett., 2002, 19(11): 1663-1665.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2002/V19/I11/1663