Application of Electron Cyclotron Resonance Assisted Plasma in GaN Deposition
CHEN Guang-chao, DU Xiao-long1 , JIANG De-yi, YAO Xin-zi
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
1 Department of Applied Physics, Beijing Institute of Technology, Beijing 100081
Application of Electron Cyclotron Resonance Assisted Plasma in GaN Deposition
CHEN Guang-chao;DU Xiao-long1 ;JIANG De-yi;YAO Xin-zi
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
1 Department of Applied Physics, Beijing Institute of Technology, Beijing 100081
关键词 ：
81.05.Ea ,
52.75.-d
Abstract ： An electron cyclotron resonance assisted plasma with N2 being the plasma source gas was employed to deposit hexagonal GaN on (0001) surface of α-Al2 O3 substrate. By special gas distributor, trimethgallium was introduced into reactant zone. A 10 ×10mm uniform GaN film was gained with relatively low deposition temperature, 560°C, and high growth rate of 1.4μm/h. A good crystal microstructure was confirmed by its spectrum with full width at half maximum of 15 arcmin.
Key words ：
81.05.Ea
52.75.-d
出版日期: 1998-10-01
引用本文:
CHEN Guang-chao;DU Xiao-long;JIANG De-yi;YAO Xin-zi. Application of Electron Cyclotron Resonance Assisted Plasma in GaN Deposition[J]. 中国物理快报, 1998, 15(10): 761-763.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I10/761
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1998, Vol. 15 
