Low-Threshold-Current and High-out-Power 660nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R
ZHENG Kai, MA Xiao-Yu, LIN Tao, WANG Jun, LIU Su-Ping, ZHANG Guang-Ze
National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Low-Threshold-Current and High-out-Power 660nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R
ZHENG Kai;MA Xiao-Yu;LIN Tao;WANG Jun;LIU Su-Ping;ZHANG Guang-Ze
National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
42.55.Px ,
81.05.Ea ,
82.33.Ya
Abstract ： We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80mW without kinks, and the maximum output power was 184mW at 22°C. The threshold current was 40mA.
Key words ：
42.55.Px
81.05.Ea
82.33.Ya
出版日期: 2005-09-01
:
42.55.Px
(Semiconductor lasers; laser diodes)
81.05.Ea
(III-V semiconductors)
82.33.Ya
(Chemistry of MOCVD and other vapor deposition methods)
引用本文:
ZHENG Kai;MA Xiao-Yu;LIN Tao;WANG Jun;LIU Su-Ping;ZHANG Guang-Ze. Low-Threshold-Current and High-out-Power 660nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R[J]. 中国物理快报, 2005, 22(9): 2269-2272.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I9/2269
[1]
CHEN Dong;LIU Wen-Qing;ZHANG Yu-Jun;LIU Jian-Guo;WEI Qing-Nong;KAN Rui-Feng;WANG Min;CUI Yi-Ben;CHEN Jiu-Ying. Modulation Frequency Multiplexed Tunable Diode Laser Spectroscopy System for Simultaneous CO, CO2 Measurements
[2]
WANG Huan;YAO Shu-De;PAN Yao-Bo;YU Tong-Jun;ZHANG Guo-Yi. Microstructure Study on Heterostructures of AlInGaN/GaN/Al2 O3 by Using Rutherford ackscattering/Channelling and XRD
[3]
WANG Jian-Feng;ZHANG Bao-Shun;ZHANG Ji-Cai;ZHU Jian-Jun;WANG Yu-Tian;CHEN Jun; LIU Wei;JIANG De-Sheng;YAO Duan-Zheng; YANG Hui. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer
[4]
XU Ji-Ying;WANG Jia;GAI Hong-Feng;TIAN Qian;WANG Bo-Xiong;HAO Zhi-Biao;HAN Shuo. Experimental Investigation of an L-Shaped Very-Small-Aperture Laser
[5]
WANG Jian;TIAN Jian-Bai;XIONG Bing;SUN Chang-Zheng;HAO Zhi-Biao;LUO Yi. Deep InP Gratings for Opto-Electronic Devices Etched by Cl2 /CH4 /Ar Inductively Coupled Plasma
[6]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching
[7]
MA Hong-Xia;HAN Yan-Jun;SHENTU Wei-Jin;ZHANG Xian-Peng;LUO Yi;. A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes
[8]
ZHANG Yong-Gang;ZHENG Yan-Lan;LIN Chun;LI Ai-Zhen;LIU Sheng. Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers
[9]
HUANG Kai-Kai;ZHANG Jian-Wei;CHEN Jing-Biao;YANG Dong-Hai. Reduce of the Linewidth of a Diode Laser by Locking to a High-Finesse Fabry--Perot Cavity
[10]
ZHANG Yong-Gang;XU Gang-Yi;LI Ai-Zhen;LI Yao-Yao;GU Yi;LIU Sheng;WEI Lin. Pulse Wavelength Scan of Room-Temperature Mid-Infrared Distributed Feedback Quantum Cascade Lasers for N2 O Gas Detection
[11]
LIU Jun-Qi;LIU Feng-Qi;LI Lu;SHAO Ye;GUO Yu;WANG Zhan-Guo. High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers
[12]
CHEN Qin;HUANG Yong-Zhen. WG-Like Modes Selectivity in a Square Cavity with Posts
[13]
XIE Xin-Jian;ZHONG Fei;QIU Kai;LIU Gui-Feng;YIN Zhi-Jun;WANG Yu-Qi;LI Xin-Hua;JI Chang-Jian;HAN Qi-Feng;CHEN Jia-Rong;CAO Xian-Cun. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template
[14]
CHEN Zhi-Tao;;SU Yue-Yong;;YANG Zhi-Jian;;ZHANG Yan;;ZHANG Bin;;GUO Li-Ping;XU Ke;;PAN Yao-Bao;;ZHANG Han;ZHANG Guo-Yi;. Room-Temperature Ferromagnetism of Ga1-x Mnx N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition
[15]
WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han. Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy
2005, Vol. 22 
