Epitaxial Pb ( Zr0.52 Ti0.48 ) O3 /Y1 Ba2 Cu3 O7-x Heterostructure Prepared by Pulsed Laser Deposition
HUANG Bi-ping, ZHENG Li-rong, GAO Jian-xia, WANG Lian-wei, HUANG Ji-po, LIN Cheng-lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Epitaxial Pb ( Zr0.52 Ti0.48 ) O3 /Y1 Ba2 Cu3 O7-x Heterostructure Prepared by Pulsed Laser Deposition
HUANG Bi-ping;ZHENG Li-rong;GAO Jian-xia;WANG Lian-wei;HUANG Ji-po;LIN Cheng-lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
81.15.Fg ,
77.55.+f ,
74.76.Bz
Abstract ： C-axis oriented Y1 Ba2 Cu3 O7-x (YBCO) thin films and PbZr0.52 Ti0.48 O3 (PZT)/(YBCO) heterostructures were deposited on single-crystal LaAIO3 by Nd:YAG pulsed laser deposition. The results showed that the YBCO films exhibited superconducting transition temperature above 86 K and ion beam channeling minimum yields xmin of 49%, indicating the relatively good quality of YBCO films deposited on the LaAIO3 substrate. The PZT films in situ grown on the YBCO films were epitaxially c-axis oriented with a saturation polarization and remanence as high as 57μC/cm2 and 39μC/cm2 (at 204 kV/cm), respectively. The coercive field of PZT films is about 55 kV/cm.
Key words ：
81.15.Fg
77.55.+f
74.76.Bz
出版日期: 1998-10-01
引用本文:
HUANG Bi-ping;ZHENG Li-rong;GAO Jian-xia;WANG Lian-wei;HUANG Ji-po;LIN Cheng-lu. Epitaxial Pb ( Zr0.52 Ti0.48 ) O3 /Y1 Ba2 Cu3 O7-x Heterostructure Prepared by Pulsed Laser Deposition[J]. 中国物理快报, 1998, 15(10): 764-766.
0.52 Ti0.48 ) O3 /Y1 Ba2 Cu3 O7-x Heterostructure Prepared by Pulsed Laser Deposition. Chin. Phys. Lett., 1998, 15(10): 764-766.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I10/764
[1]
LIU Yan-Ping;LAN Wei;HE Zhi-Wei;WANG Yin-Yue. Electrical Properties of La-Doped Al2 O3 Films on Si (100) Substrates as a High-Dielectric-Constant Gate Material
[2]
GUAN Li;ZHANG Duan-Ming;LI Zhi-Hua;TAN Xin-Yu;LI Li;LIU Dan;FANG Ran-Ran;LIU Gao-Bin;HU De-Zhi. Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition
[3]
HE Jia-Qing;E. VASCO;R. DITTMANN;WANG Ren-Hui. Temperature-Dependent Structure of Epitaxial (Ba,Sr)TiO3 Films Grown on SrRuO3 -Covered SrTiO3 Substrates
[4]
FANG Liang;SHEN Ming-Rong;LI Zhen-Ya;CAO Wen-Wu. Analysis of Electrical Properties of Post-Annealed Polycrystalline CaCu3 Ti4 O12 Films by Impedance Spectroscopy
[5]
XIANG Wen-Feng;LU Hui-Bin;YAN Lei;HE Meng;ZHOU Yue-Liang;CHEN Zheng-Hao. Formation of Interfacial Layers in LaAlO3 /Silicon during Film Deposition
[6]
XU Min;LU Hong-Liang;DING Shi-Jin;SUN Liang;ZHANG Wei;WANG Li-Kang. Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2 O3 Ultra-Thin Film on Si Substrate
[7]
KONG Wei-Jin;SHEN Zi-Cai;SHEN Jian;SHAO Jian-Da;FAN Zheng-Xiu. Investigation of Laser-Induced Damage on Multi-Layer Dielectric Gratings
[8]
XIANG Wen-Feng;LU Hui-Bin;CHEN Zheng-Hao;HE Meng;ZHOU Yue-Liang. Oxygen Pressure Dependence of Properties of Epitaxial LaAlO3 Films Grown on Si (100)
[9]
ZHOU Qian;DONG Peng;YI Gui-Yun;LIU Li-Xia;CHENG Bing-Ying. Preparation of TiO2 Inverse Opal via a Modified Filling Process
[10]
FEI Yi-Yan;WANG Xu;LU Hui-Bin;YANG Guo-Zhen;ZHU Xiang-Dong;. Unit-Cell by Unit-Cell Homoepitaxial Growth Using Atomically Flat SrTiO3 (001) Substrates and Pulsed Laser Deposition
[11]
HUANG Yan-Hong;HE Meng;ZHAO Kun;TIAN Huan-Fang;Lü Hui-Bin;JIN Kui-Juan;CHEN Zheng-Hao;ZHOU Yue-Liang;LI Jian-Qi;YANG Guo-Zhen. Laser Molecular Beam Epitaxy Growth of BaTiO3 in Seven Thousands of Unit-Cell Layers
[12]
LIN Ming-Tong;CHEN Guo-Rong;YANG Yun-Xia;XIAO Tian;XU Yi;LOU Jun-Hui;CHEN Chen-Xi. Dielectric Properties of Multilayered Ba0.5 Sr0.5 TiO3 Thin Films Deposited on ITO-Coated Corning 1737 Glass by rf Magnetron Sputtering
[13]
YE Chao;YU Xiao-Zhu;WANG Ting-Ting;NING Zhao-Yuan;XIN Yu;JIANG Mei-Fu. Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma
[14]
XIANG Wen-Feng;LU Hui-Bin;CHEN Zheng-Hao;HE Meng;LU Xu-Bing;LIU Li-Feng;GUO Hai-Zhong;ZHOU Yue-Liang. N-Doped LaAlO3 /Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability
[15]
MIAO Jun;CHEN Wei-Ran;CHEN Bin;YANG Hao;PENG Wei;ZHONG Jian-Pin;WU Hao;YUAN Jie;XU Bo;QIU Xiang-Gang;CAO Li-Xin;ZHAO Bai-Ru. Structural and Electrical Properties of Barium Strontium Titanate Thin Film on Conductive La1-x Srx MnO3 Bottom Layer
1998, Vol. 15 
