Epitaxial Pb ( Zr0.52 Ti0.48 ) O3 /Y1 Ba2 Cu3 O7-x Heterostructure Prepared by Pulsed Laser Deposition
HUANG Bi-ping, ZHENG Li-rong, GAO Jian-xia, WANG Lian-wei, HUANG Ji-po, LIN Cheng-lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
Epitaxial Pb ( Zr0.52 Ti0.48 ) O3 /Y1 Ba2 Cu3 O7-x Heterostructure Prepared by Pulsed Laser Deposition
HUANG Bi-ping;ZHENG Li-rong;GAO Jian-xia;WANG Lian-wei;HUANG Ji-po;LIN Cheng-lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
关键词 :
81.15.Fg ,
77.55.+f ,
74.76.Bz
Abstract : C-axis oriented Y1 Ba2 Cu3 O7-x (YBCO) thin films and PbZr0.52 Ti0.48 O3 (PZT)/(YBCO) heterostructures were deposited on single-crystal LaAIO3 by Nd:YAG pulsed laser deposition. The results showed that the YBCO films exhibited superconducting transition temperature above 86 K and ion beam channeling minimum yields xmin of 49%, indicating the relatively good quality of YBCO films deposited on the LaAIO3 substrate. The PZT films in situ grown on the YBCO films were epitaxially c-axis oriented with a saturation polarization and remanence as high as 57μC/cm2 and 39μC/cm2 (at 204 kV/cm), respectively. The coercive field of PZT films is about 55 kV/cm.
Key words :
81.15.Fg
77.55.+f
74.76.Bz
出版日期: 1998-10-01
引用本文:
HUANG Bi-ping;ZHENG Li-rong;GAO Jian-xia;WANG Lian-wei;HUANG Ji-po;LIN Cheng-lu. Epitaxial Pb ( Zr0.52 Ti0.48 ) O3 /Y1 Ba2 Cu3 O7-x Heterostructure Prepared by Pulsed Laser Deposition[J]. 中国物理快报, 1998, 15(10): 764-766.
HUANG Bi-ping, ZHENG Li-rong, GAO Jian-xia, WANG Lian-wei, HUANG Ji-po, LIN Cheng-lu. Epitaxial Pb ( Zr0.52 Ti0.48 ) O3 /Y1 Ba2 Cu3 O7-x Heterostructure Prepared by Pulsed Laser Deposition. Chin. Phys. Lett., 1998, 15(10): 764-766.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I10/764
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