Charge States of DX Centers and Electronic Raman Scattering in n-Ga1-x AIx As
LIAN Shi-yang
Department of Physics, Xiamen University, Xiamen 361005
Charge States of DX Centers and Electronic Raman Scattering in n-Ga1-x AIx As
LIAN Shi-yang
Department of Physics, Xiamen University, Xiamen 361005
关键词 ：
71.55.Eq ,
78.30.Fs
Abstract ： The observation of the electronic Raman scattering in n-Gal-x AIx As (x > 0.45) is reported and the charge state of DX centers in III-V alloy semiconductors is discussed. The result shows clearly that the electronic Raman scattering in n-Gal-x AIx As of indirect band-gap and the persistent photoconductivity in n-Gal-x AIx As of direct band-gap are equivalent to each other. Both of them originate from the optical induced metastable state of donors in n-Gal-x AIx As (x > 0.22) at low temperatures. At higher temperatures, this hydrogen-like level is depopulated to the benefit of a stable DX-like deep state.
Key words ：
71.55.Eq
78.30.Fs
出版日期: 1998-02-01
引用本文:
LIAN Shi-yang. Charge States of DX Centers and Electronic Raman Scattering in n-Ga1-x AIx As[J]. 中国物理快报, 1998, 15(2): 125-127.
1-x AIx As. Chin. Phys. Lett., 1998, 15(2): 125-127.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I2/125
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1998, Vol. 15 
