Modelling Magnetoresistance Effect in Limited Anisotropic Semiconductors
Filippov V. V.1,2**, Mitsuk S.V.1
1Lipetsk State Pedagogical University of P. P. Semenov-Tyan-Shansky, Lipetsk 398020, the Russian Federation 2Lipetsk State Technical University, Lipetsk 398600, the Russian Federation
Abstract：A macroscopic model of the magnetoresistance effect in limited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.
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2017, Vol. 34 
