NOVEL SEMICONDUCTOR SUBSTRATE FO-D BY HYDROGEN ION IMPLANTATION INTO SILICON
LI Jianming
Institute of Semiconductors, Academia Sinica, Beijing
NOVEL SEMICONDUCTOR SUBSTRATE FO-D BY HYDROGEN ION IMPLANTATION INTO SILICON
LI Jianming
Institute of Semiconductors, Academia Sinica, Beijing
关键词 ：
61.70.Sk ,
61.70.At ,
66.30.Jt ,
72.80.Cw
Abstract ： A high resistivity layer formed beneath the silicon surface by using protons implantation and two-step annealing is described. Experiment shows that the surface Hall mobility of top layer has increased by 26%. This novel substrate challenges to GaAs (advantages of speed) and opens a new road for the realization of very high speed integrated circuits.
Key words ：
61.70.Sk
61.70.At
66.30.Jt
72.80.Cw
出版日期: 1989-10-01
引用本文:
LI Jianming. NOVEL SEMICONDUCTOR SUBSTRATE FO-D BY HYDROGEN ION IMPLANTATION INTO SILICON
[J]. 中国物理快报, 1989, 6(10): 458-460.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1989/V6/I10/458
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