High Hole Mobility Si/Sil-x Gex /Si Heterostructure
JIANG Ruolian, LIU Jianlin, ZHENG Youdou* , ZHENG Guozhen* , WEI Yayi* , SHEN Xuechu*
Department of Physics, Nanjing University, Nanjing 210008
* National Laboratory for Infrared Physics, Shanghai 200083
High Hole Mobility Si/Sil-x Gex /Si Heterostructure
JIANG Ruolian;LIU Jianlin;ZHENG Youdou* ;ZHENG Guozhen* ;WEI Yayi* ;SHEN Xuechu*
Department of Physics, Nanjing University, Nanjing 210008
* National Laboratory for Infrared Physics, Shanghai 200083
关键词 ：
73.40.Lq ,
72.80.Cw ,
68.55.-a
Abstract ： High mobility Si/Sil-x Gex /Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD (rapid radiant heating/very low pressure-CVD). Hole Hall mobilities as high as about 300cm2 /V.s(293 K) and 7500cm2 /V.s(77K) have been obtained for heterostructures with x = 0.3. The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated.
Key words ：
73.40.Lq
72.80.Cw
68.55.-a
出版日期: 1994-02-01
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
72.80.Cw
(Elemental semiconductors)
68.55.-a
(Thin film structure and morphology)
引用本文:
JIANG Ruolian;LIU Jianlin;ZHENG Youdou*;ZHENG Guozhen*;WEI Yayi*;SHEN Xuechu*. High Hole Mobility Si/Sil-x Gex /Si Heterostructure[J]. 中国物理快报, 1994, 11(2): 116-118.
l-x Gex /Si Heterostructure. Chin. Phys. Lett., 1994, 11(2): 116-118.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I2/116
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1994, Vol. 11 
