Electroreflectance Study of Strained Layer Gex Sil-x /Si Multiple Quantum Wells
PAN Shihong, HUANG Shuo, CHEN Wei, ZHANG Cunzhou, SHENG Chi* , WANG Xun*
Department of Physics, Nankai University, Tianjin 300071
* Surface Physics Laboratory, Fudan University, Shanghai 200433
Electroreflectance Study of Strained Layer Gex Sil-x /Si Multiple Quantum Wells
PAN Shihong;HUANG Shuo;CHEN Wei;ZHANG Cunzhou;SHENG Chi* ;WANG Xun*
Department of Physics, Nankai University, Tianjin 300071
* Surface Physics Laboratory, Fudan University, Shanghai 200433
关键词 ：
73.40.Lq ,
78.65.Fa
Abstract ： A set of strained-layer Gex Sil-x /Si multiple quantum wells has been investigated by electroreflectance (ER) spectroscopy. In the ER spectra we have observed transitions in the quantum wells associated with the critical points E0 , E1 , as well as E0 ¹. The transitions of E0 and E0 ¹, which are very weak in the bulk material, are apparently enhanced in quantum wells.
Key words ：
73.40.Lq
78.65.Fa
出版日期: 1994-02-01
:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
78.65.Fa
引用本文:
PAN Shihong;HUANG Shuo;CHEN Wei;ZHANG Cunzhou;SHENG Chi*;WANG Xun*. Electroreflectance Study of Strained Layer Gex Sil-x /Si Multiple Quantum Wells
[J]. 中国物理快报, 1994, 11(2): 119-122.
x Sil-x /Si Multiple Quantum Wells
. Chin. Phys. Lett., 1994, 11(2): 119-122.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I2/119
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1994, Vol. 11 
