A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs
ZHANG Li-Ning1,2, MEI Jin-He2, ZHANG Xiang-Yu2, TAO Jin2, HU Yue2, HE Jin1,2**, CHAN Mansun3
1School of Electronics and Computer Sciences, Peking University, Beijing 100871 2Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Hongkong Institution,Peking Univesity Shenzhen Institute, Shenzhen 518055 3Department of ECE, The Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
Abstract：We comparatively study two representative ballistic transport models of nanowire metal-oxide-semiconductor field effect transistors, i.e. the Natori model and the Jiménez model. The limitations and applicability of both the models are discussed. Then the Jiménez model is extended to include atomic dispersion relations and is compared with the Natori model from the aspects of ballistic current and quantum capacitance. It is found that the Jiménez model can produce similar results compared with the more complex Natori model even at very small nanowire dimensions.
. [J]. 中国物理快报, 2013, 30(11): 117102-117102.
ZHANG Li-Ning, MEI Jin-He, ZHANG Xiang-Yu, TAO Jin, HU Yue, HE Jin, CHAN Mansun. A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs. Chin. Phys. Lett., 2013, 30(11): 117102-117102.
2013, Vol. 30 
