1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2University of Chinese Academy of Sciences, Beijing 100049 3International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 4CAS Center for Excellence in Superconducting Electronics, Shanghai 200050
Abstract：Using angle-resolved photoemission spectroscopy, we study the low-energy electronic structure of a layered ternary telluride EuSbTe$_3$ semiconductor. It is found that the photoemission constant energy contours can be well described by the simple two-parameter ($t_{\rm perp}$ and $t_{\rm para}$) tight-binding model based on the Te orbitals in square-net planes of EuSbTe$_3$, suggesting its Te 5$p$ orbitals dominated low-lying electronic structure, which is reminiscent of other rare-earth tritellurides. However, a possible charge-density-wave gap of 80 meV is found to persist in 300 K, which renders the unexpected semiconducting properties in EuSbTe$_3$. Moreover, we reveal an extra band gap occurring around 200 meV below the Fermi level at low temperatures, which can be attributed to the interaction between the main and folded bands due to lattice scatterings. Our findings provide the first comprehensive understanding of the electronic structure of layered ternary tellurides, which lays the basis for future research on these compounds.
Inosov D S, Zabolotnyy V B, Evtushinsky D V, Kordyuk A A, Büchner B, Follath R, Berger H and Borisenko S V 2008 New J. Phys.10 125027
[13]
Borisenko S V, Kordyuk A A, Yaresko A N, Zabolotnyy V B, Inosov D S, Schuster R, Büchner B, Weber R, Follath R, Patthey L and Berger H 2008 Phys. Rev. Lett.100 196402
[14]
Shen D W, Zhang Y, Yang L X, Wei J, Ou H W, Dong J K, He C, Xie B P, Zhao J F, Zhou B, Arita M, Shimada K, Namatame H, Taniguchi M, Shi J and Feng D L 2008 Phys. Rev. Lett.101 226406
[15]
Borisenko S V, Kordyuk A A, Zabolotnyy V B, Inosov D S, Evtushinsky D, Büchner B, Yaresko A N, Varykhalov A, Follath R, Eberhardt W, Patthey L and Berger H 2009 Phys. Rev. Lett.102 166402
2018, Vol. 35 
