Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory
XU Yue1,3, YAN Feng1, CHEN Dun-Jun1, SHI Yi1, WANG Yong-Gang2, LI Zhi-Guo2, YANG Fan2, WANG Jos-Hua2, LIN Peter2, CHANG Jian-Guang2
1Department of Physics, Nanjing University, Nanjing 210093 2Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203 3College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003
Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory
XU Yue1,3, YAN Feng1, CHEN Dun-Jun1, SHI Yi1, WANG Yong-Gang2, LI Zhi-Guo2, YANG Fan2, WANG Jos-Hua2, LIN Peter2, CHANG Jian-Guang2
1Department of Physics, Nanjing University, Nanjing 210093 2Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai 201203 3College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003
As the scaling-down of non-volatile memory (NVM) cells continues, the impact of shallow trench isolation (STI) on NVM cells becomes more severe. It has been observed in the 90 nm localized charge-trapping non-volatile memory (NROMTM) that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10\circ tilt at the active area edge as a new solution to solve this problem is developed.
As the scaling-down of non-volatile memory (NVM) cells continues, the impact of shallow trench isolation (STI) on NVM cells becomes more severe. It has been observed in the 90 nm localized charge-trapping non-volatile memory (NROMTM) that the programming efficiency of edge cells adjacent to STI is remarkably lower than that of other cells when channel hot electron injection is applied. Boron segregation is found to be mainly responsible for the low programming efficiency of edge cells. Meanwhile, an additional boron implantation of 10\circ tilt at the active area edge as a new solution to solve this problem is developed.
XU Yue;YAN Feng;CHEN Dun-Jun;SHI Yi;WANG Yong-Gang;LI Zhi-Guo;YANG Fan;WANG Jos-Hua;LIN Peter;CHANG Jian-Guang. Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory[J]. 中国物理快报, 2010, 27(6): 67201-067201.
XU Yue, YAN Feng, CHEN Dun-Jun, SHI Yi, WANG Yong-Gang, LI Zhi-Guo, YANG Fan, WANG Jos-Hua, LIN Peter, CHANG Jian-Guang. Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory. Chin. Phys. Lett., 2010, 27(6): 67201-067201.
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2010, Vol. 27 
