A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection
Hai-Ling Wang1, Wan-Hua Zheng1,2**
1Laboratory of Solid State Optoelectronic Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract:A single mode hybrid III–V/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry–Pérot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3 mW, and the threshold is 37 mA at room temperature and continuous wave operation.