1School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract：Higher-$\kappa$ dielectric LaLuO$_{3}$, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconductor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO$_{3}$ with Ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.
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2016, Vol. 33 
