A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application
CHANG Hu-Dong1, LIU Gui-Ming1, SUN Bing1, ZHAO Wei1, WANG Wen-Xin2, LIU Hong-Gang1**
1Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 2Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Abstract：We demonstrate a high performance implant-free n-type In0.7Ga0.3As channel MOSFET with a 4-nm InP barrier layer fabricated on a semi-insulating substrate employing a 10-nm Al2O3 as gate dielectric. The maximum effective channel mobility is 1862 cm2/V?s extracted by the split C–V method. Devices with 0.8 μm gate length exhibit a peak extrinsic transconductance of 85 mS/mm and a drive current of more than 200 mA/mm. A short-circuit current gain cutoff frequency fT of 24.5 GHz and a maximum oscillation frequency fmax of 54 GHz are achieved for the 0.8 μm gate-length device. The research is helpful to obtain higher performance In0.7Ga0.3As MOSFETs for radio-frequency applications.
. [J]. Chin. Phys. Lett., 2013, 30(3): 37303-037303.
CHANG Hu-Dong, LIU Gui-Ming, SUN Bing, ZHAO Wei, WANG Wen-Xin, LIU Hong-Gang. A High Performance In0.7Ga0.3As MOSFET with an InP Barrier Layer for Radio-Frequency Application. Chin. Phys. Lett., 2013, 30(3): 37303-037303.
2013, Vol. 30 
