Refractive Index and Electronic Polarizability of Ternary Chalcopyrite Semiconductors
KUMAR V.** , SINHA Anita, SINGH B. P., SINHA A. P., JHA V.
Department of Electronics Engineering, Indian School of Mines, Dhanbad 826004, India
Abstract ：Simple models are proposed for the calculation of refractive index n and electronic polarizability α of AI BIII C2 VI and AII BIV C2 V groups of chalcopyrite semiconductors from their energy gap data. The values of n and α for 2 compounds of AI BIII C2 VI family and 12 compounds of AII BIV C2 V family are calculated for the first time in this work. The proposed models are applicable for the whole range of energy gap materials. The calculated values are compared with the available experimental and reported values. A fairly good agreement between them is obtained.
收稿日期: 2015-08-14
出版日期: 2016-01-05
:
77.84.Bw
(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
75.50.-y
(Studies of specific magnetic materials)
78.20.Ci
(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
[1] Shaposhnikov V L, Krivosheeva A V, Borisenko V E, Lazzari J L and d'Avitaya F A 2012 Phys. Rev. B 85 205201 2005 J. Opt. Soc. Am. B 22 1884 Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications (New York: Pergamon Press)2012 Appl. Phys. Lett. 101 192105 2014 Phys. Lett. A 378 519 1950 Proc. Phys. Soc. B 63 167 1985 Phys. Status Solidi B 131 415 2007 Infrared Phys. Technol. 50 21 1979 Infrared Phys. 19 603 2003 Difference Sci. J. 53 239 1972 Phys. Rev. B 6 3898 2008 Opt. Mater. 31 209 2008 Comput. Mater. Sci. 41 570 1994 Infrared Phys. Technol. 35 609 2013 Acta Phys. Pol. A 123 737 1967 Phys. Rev. Lett. 19 415 1970 Rev. Mod. Phys. 42 317 1986 Phys. Rev. 166 832 1969 Phys. Rev. 182 891 1969 Phys. Rev. 187 1007 1973 Phys. Rev. B 7 2591 1973 J. Chem. Phys. 59 1463 1971 Phys. Rev. Lett. 26 1441 1969 Phys. Rev. 178 1218 1932 Phys. Rev. 41 813 1962 Phys. Rev. 128 2093 2009 J. Alloys Compd. 473 28 1975 Can. J. Phys. 53 2549 2006 Phys. Status Solidi B 243 2858 2009 J. Alloys Compd. 486 795 1988 Infrared Phys. 28 363 Indian J. Pure Appl. Phys. 48 5711996 Infrared Phys. Technol. 37 505 Bonding, Energy levels and Bonds in Inorganic Solids (England: Longman Scientific and Technical Pub)1980 J. Phys. C 13 2979 Photoconductivity: Art, Science and Technology (New York: CRC Press)1981 J. Phys. Chem. Solids 42 1079 Indian J. Pure Appl. Phys. 58 463Introduction to Solid State Physics (New York: Wiley) p 4591996 Cryst. Res. Technol. 31 827 2005 Physica B 369 243 PMC Phys. B 1: 12 2008 Solid State Commun. 145 571 2004 Phys. Rev. B 69 035201 Tables of Numerical Data and Functional Relationships in Science and Technology (Berlin: Springer-Verlag) vol 17 p 1241998 Phys. Rev. B 57 7037 2005 J. Appl. Phys. 97 043507 2011 J. Phys. Chem. Solids 72 1414 2010 Mater. Res. Bull. 45 288 1980 Phys. Status Solidi (b) 100 715 1982 Infrared Phys. 22 255 1979 Phys. Status Solidi (b) 93 K155 1992 Phys. Status Solidi (b) 174 K91 Hand Book of Chemistry and Physics Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology (New York: Springer) p 17aThe Physics of Semiconductors (New York: Springer), 2nd edn p 1502004 Appl. Surf. Sci. 223 148 1984 Phys. Rev. B 29 1882 1984 Phys. Rev. B 30 741 1983 Phys. Rev. B 28 5822 1971 Phys. Rev. B 4 2463 1974 Phys. Rev. B 9 5203 1989 J. Appl. Phys. 65 2031 Izv Akad Nauk SSSR Neorg. Mater. 7 1706Inorg. Mater. (USSR) 7 15271973 Phys. Rev. B 7 4485 1971 Phys. Rev. B 4 2643 1971 Phys. Rev. B 4 4455 2003 J. Phys.: Condens. Matter 15 6043 2004 Nat. Mater. 3 410 1998 Mater. Sci. Eng. B 54 149
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
.
[15]
DOU Yan-Kun, QI Xin, JIN Hai-Bo, CAO Mao-Sheng, Usman Zahid, HOU Zhi-Ling. First Principle Study of the Electronic Properties of 3C-SiC Doped with Different Amounts of Ni
2015, Vol. 32 
