Charge Loss Characteristics of Different Al Contents in a HfAlO Trapping Layer Investigated by Variable Temperature Kelvin Probe Force Microscopy
ZHANG Dong1,2, HUO Zong-Liang2**, JIN Lei2, HAN Yu-Long2, CHU Yu-Qiong2, CHEN Guo-Xing2, LIU Ming2**, YANG Bao-He1**
1Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384 2Institutes of Microelectronics, Chinese Academy of Sciences, Beijing 100029
Abstract：Kelvin probe force microscopy (KFM) technology is applied to investigate the charge storage and loss characteristics of the HfAlO charge trapping layer with various Al contents. The experimental results demonstrate that with the increase of Al contents in the HfAlO trapping layer, trap density significantly increases. Improvement of data retention characteristic is also observed. Comparing the vertical charge loss and lateral charge spreading of the HfAlO trapping layers, the former plays a major role in the charge loss mechanism. Variable temperature KFM measurement results show that the extracted effective electron trap energy level increases with increasing Al contents in HfAlO trapping layer, which is in accordance with the charge loss characteristics.
(Surface states, band structure, electron density of states)
引用本文:
. [J]. 中国物理快报, 2014, 31(06): 67701-067701.
ZHANG Dong, HUO Zong-Liang, JIN Lei, HAN Yu-Long, CHU Yu-Qiong, CHEN Guo-Xing, LIU Ming, YANG Bao-He. Charge Loss Characteristics of Different Al Contents in a HfAlO Trapping Layer Investigated by Variable Temperature Kelvin Probe Force Microscopy. Chin. Phys. Lett., 2014, 31(06): 67701-067701.
2014, Vol. 31 
