Supersaturating Silicon with Titanium by Continuous-Wave Laser Irradiation of Sputtered Titanium Film on Silicon
Bao-Dian Fan1 , Yu Qiu2 , Rong Chen1 , Miao Pan3 , Li-Han Cai1 , Jiang-Hui Zheng1 , Chao Chen1,4**
1 College of Energy, Xiamen University, Xiamen 3610052 Institute of Advanced Photovoltaics, Fujian Jiangxia University, Fuzhou 3501083 Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 3152014 School of Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen 361005
Abstract ：A method of magnetron sputtering followed by continuous-wave (cw) laser irradiation is developed to prepare crystalline silicon supersaturated with titanium. The irradiation of single crystalline Si samples sputtered with a thin layer of Ti is carried out under the 1064 nm cw laser in a specially designed home-made facility. The thickness of the Si layer, within which the concentration of Ti surpasses the Mott limit, reaches 365 nm and the maximum concentration of Ti reaches $1.83\times10^{21}$ cm$^{-3}$. The crystalline structure of the Si samples is kept unchanged after cw laser irradiation. These results show that the current method can be an efficient way to obtain an intermediate band semiconductor material for solar cells.
收稿日期: 2015-09-30
出版日期: 2016-02-26
:
61.82.Fk
(Semiconductors)
61.72.Bb
(Theories and models of crystal defects)
82.80.Ms
(Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI))
引用本文:
. [J]. 中国物理快报, 2016, 33(02): 26103-026103.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/2/026103
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I02/26103
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2016, Vol. 33 
