Solution-Processed High Mobility Top-Gate N-Channel Polymer Field-Effect Transistors
XIANG Lan-Yi, YING Jun, HAN Jin-Hua, WANG Wei** , XIE Wen-Fa
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
Abstract ：Polymer field-effect transistors operated in the n-channel model with a top-gate/bottom-contact are processed using a solution method. The transistor performance depends on the gate dielectric layer. A high performance polymer transistor is achieved, with the saturated electron mobility of about 0.46 cm2 /Vs, threshold voltage nearly 0 V and subthreshold sway of about 0.9 V/decade, employing a polystyrene (PS) dielectric layer. The transistor performances are further improved with increasing current and lower operation voltages by utilizing a bi-layer gate dielectric, comprising a thin PS dielectric layer adjacent to the semiconductor to minimize the density of the interface traps for obtaining a small VT , a large μ and a poly(methyl methacrylate) (PMMA) dielectric layer with a relatively high-κ adjacent to the gate electrode for enlarging the capacitance, processed from the orthogonal solvents.
收稿日期: 2015-04-07
出版日期: 2015-10-02
:
85.30.Tv
(Field effect devices)
72.80.Le
(Polymers; organic compounds (including organic semiconductors))
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
[1] Mizukami M, Hirohata N, Iseki T, Ohtawara K, Tada T, Yagyu S, Abe T, Suzuki T, Fujisaki Y, Inoue Y, Tokito S and Kurita T 2006 IEEE Electron Device Lett. 27 249 2003 Appl. Phys. Lett. 82 3964 2007 Nature 445 745 2010 Chin. Phys. Lett. 27 018503 2014 Nat. Commun. 5 2954 2012 Adv. Mater. 24 4618 2009 J. Am. Chem. Soc. 131 6215 2008 Org. Electron. 9 1140 2008 J. Am. Chem. Soc. 130 12273 2009 Org. Electron. 10 1442 2013 Chin. Phys. Lett. 30 028501 2012 Appl. Phys. Lett. 100 043302 2015 Org. Electron. 17 178 2015 Org. Electron. 19 120 2007 Nat. Nanotechnol. 2 784 2007 J. Appl. Phys. 102 094510 2009 Nature 457 679 2011 Adv. Funct. Mater. 21 3371 2012 Adv. Mater. 24 5433 2005 J. Phys. D: Appl. Phys. 38 1148 2003 Adv. Funct. Mater. 13 199
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
.
[15]
.
2015, Vol. 32 
