Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis
LIU Chang1 , YU Wen-Jie1** , ZHANG Bo1 , XUE Zhong-Ying1 , WU Wang-Ran2 , ZHAO Yi3 , ZHAO Qing-Tai4
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502 School of Electronic Science and Engineering, Nanjing University, Nanjing 2100933 Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 3100274 Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA Fundamentals of Future Intormation Technology, Jülich 52425, Germany
Abstract ：The gate-induced-drain-leakage of MOSFETs is analyzed to better understand the sub-threshold swing degradation of SiGe tunnel field-effect transistors and their band-to-band tunneling mechanism. The numerical model of the analysis is elaborated. Equivalent trap energy levels are extracted for Si and strained SiGe. It is found that the equivalent trap energy level in SiGe is shallower than that in Si.
出版日期: 2014-10-31
:
61.72.uf
(Ge and Si)
77.84.-s
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
72.20.Ee
(Mobility edges; hopping transport)
引用本文:
. [J]. 中国物理快报, 2014, 31(10): 106103-106103.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/10/106103
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I10/106103
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2014, Vol. 31 
