摘要The size distribution of Si-nanocrystals (Si-ncs) in evenly annealed SiO is investigated with transmission electron microscopy (TEM), x-ray diffraction (XRD), and Raman scattering. Two groups of Si-ncs with very different most probable diameters are identified, where one is >6 nm and the other one is < 2 nm. Both of them increase gradually with increasing annealing temperature. Such a phenomenon is observed directly by TEM for samples with larger Si−ncs (>10 nm) and it can be revealed clearly for all samples by Raman spectra with two components (∼500 cm−1 and ∼520 cm−1). The results of XRD show the average effect. The experimental results indicate that the common assumption of Si-nc size distribution with single most probable diameter is not always proper and the possible mechanisms are briefly discussed.
Abstract：The size distribution of Si-nanocrystals (Si-ncs) in evenly annealed SiO is investigated with transmission electron microscopy (TEM), x-ray diffraction (XRD), and Raman scattering. Two groups of Si-ncs with very different most probable diameters are identified, where one is >6 nm and the other one is < 2 nm. Both of them increase gradually with increasing annealing temperature. Such a phenomenon is observed directly by TEM for samples with larger Si−ncs (>10 nm) and it can be revealed clearly for all samples by Raman spectra with two components (∼500 cm−1 and ∼520 cm−1). The results of XRD show the average effect. The experimental results indicate that the common assumption of Si-nc size distribution with single most probable diameter is not always proper and the possible mechanisms are briefly discussed.
(Methods of micro- and nanofabrication and processing)
引用本文:
KE Wei-Wei;FENG Xue**;HUANG Yi-Dong. Si-Nanocrystals with Bimodal Size Distribution in Evenly Annealed SiO Revealed with Raman Scattering[J]. 中国物理快报, 2012, 29(1): 16402-016402.
KE Wei-Wei, FENG Xue**, HUANG Yi-Dong. Si-Nanocrystals with Bimodal Size Distribution in Evenly Annealed SiO Revealed with Raman Scattering. Chin. Phys. Lett., 2012, 29(1): 16402-016402.
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