摘要To transfer a photon with a 1.55 μm wavelength into an electron in an integrated optoelectronic silicon waveguide detector, selenium-doped silicon with deep energy levels is used. The deep levels in the silicon with implanted selenium are studied. Three levels are observed and their captured cross sections, concentrations and in-depth profiles are measured.
Abstract：To transfer a photon with a 1.55 μm wavelength into an electron in an integrated optoelectronic silicon waveguide detector, selenium-doped silicon with deep energy levels is used. The deep levels in the silicon with implanted selenium are studied. Three levels are observed and their captured cross sections, concentrations and in-depth profiles are measured.
GAO Li-Peng;HAN Pei-De**;MAO Xue;FAN Yu-Jie;HU Shao-Xu;ZHAO Chun-Hua;MI Yan-Hong
. Deep Energy Levels Formed by Se Implantation in Si[J]. 中国物理快报, 2011, 28(3): 36108-036108.
GAO Li-Peng, HAN Pei-De**, MAO Xue, FAN Yu-Jie, HU Shao-Xu, ZHAO Chun-Hua, MI Yan-Hong
. Deep Energy Levels Formed by Se Implantation in Si. Chin. Phys. Lett., 2011, 28(3): 36108-036108.
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2011, Vol. 28 
