中国物理快报  2014, Vol. 31 Issue (1): 16101-016101    DOI: 10.1088/0256-307X/31/1/016101
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Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO3 Gate Dielectric
YU Wen-Jie1**, ZHANG Bo1, LIU Chang1, XUE Zhong-Ying1, CHEN Ming1, ZHAO Qing-Tai2
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Peter Grünberg Institute 9 (PGI 9), Forschungszentrum Jülich and JARA Fundamentals of Future Intormation Technology, 52425 Jülich, Germany