2011, Vol. 28(3): 36108-036108    DOI: 10.1088/0256-307X/28/3/036108
	Deep Energy Levels Formed by Se Implantation in Si
	GAO Li-Peng, HAN Pei-De**, MAO Xue, FAN Yu-Jie, HU Shao-Xu, ZHAO Chun-Hua, MI Yan-Hong
	State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
	收稿日期 2010-09-02  修回日期 1900-01-01
	Supporting info
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