Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching
WANG Qiang1,2 , JI Zi-Wu1** , XIAO Hong-Di1 , LV Hai-Yan1 , LI Jian-Fei1 , XU Xian-Gang3 , LV Yuan-Jie4 , FENG Zhi-Hong4
1 School of Physics, Shandong University, Jinan 250102 School of Science, Qilu University of Technology, Jinan 2503533 State Key Laboratory of Crystal Materials, Shandong University, Jinan 2501004 Science and Technology on Application Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051
Abstract ：Nanoporous (NP) GaN is prepared by electrochemical etching on a GaN epilayer grown on a sapphire substrate by metal-organic chemical vapor deposition. Scanning electron microscopy reveals that the average pore diameter and inter-pore spacing are approximately 25 and 45 nm, respectively. The photoluminescence (PL) spectra show that in contrast to the initial as-grown GaN epilayer, the NP GaN exhibits a high near-band-edge UV intensity, significant relaxation of compressive strain, and a lower yellow luminescence intensity. Both the line shape and line width of the PL spectra are almost the same for these two samples. The high quality of the NP GaN can be explained by the enhancement of the PL extraction efficiency and the decrease of impurity and defect density after etching.
:
81.65.Cf
(Surface cleaning, etching, patterning)
71.55.Eq
(III-V semiconductors)
61.72.Hh
(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))
引用本文:
. [J]. 中国物理快报, 2014, 31(08): 88103-088103.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/8/088103
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I08/88103
[1] Tsao J Y, Coltrin M E, Crawford M H and Simmons J A 2010 Proc. IEEE 98 1162 2000 Phys. Status Solidi A 180 51 2006 Jpn. J. Appl. Phys. 45 7565 2000 J. Appl. Phys. 87 965 2002 J. Cryst. Growth 235 177 2003 Appl. Phys. Lett. 83 677 2008 Chin. Phys. B 17 2245 2003 Chin. Phys. Lett. 20 398 2000 Appl. Phys. Lett. 76 1113 2007 Appl. Sur. Sci. 253 7429 2014 Chin. Phys. B 23 058101 2007 Appl. Phys. Lett. 90 171917 2007 Appl. Phys. Lett. 90 053112 2007 Phys. Status Solidi B 244 1793 2012 J. Appl. Phys. 112 064303 2002 J. Appl. Phys. 91 5867 2005 J. Appl. Phys. 97 061301 2006 Appl. Phys. Lett. 88 241917 2011 Nanotechnology 22 045603 2009 Appl. Phys. Lett. 95 041901 2005 Electrochem. Solid-State Lett. 8 G85 2005 Physica E 28 141 2011 Appl. Surf. Sci. 257 6197 1996 Appl. Phys. Lett. 68 3758 1997 J. Cryst. Growth 180 27
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
YU Zhi-Guo, CHEN Peng YANG Guo-Feng, LIU Bin, XIE Zi-Li, XIU Xiang-Qian, WU Zhen-Long, XU Feng, XU Zhou, HUA Xue-Mei, HAN Ping, SHI Yi ZHANG Rong, ZHENG You-Dou. Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells
[8]
LI Jian-Hua;YU Bo-Ming;ZOU Ming-Qing. A Model for Fractal Dimension of Rough Surfaces
[9]
LIU Xiao-Bing;JIA Xiao-Peng;MA Hong-An;HAN Wei;GUO Xin-Kai;JIA Hong-Sheng. HPHT Synthesis of High-Quality Diamond Single Crystals with Micron Grain Size
[10]
PEI Xiao-Jiang;GUO Li-Wei;WANG Xiao-Hui;WANG Yang;JIA Hai-Qiang;CHEN Hong;ZHOU Jun-Ming. Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate
[11]
GAO Hai-Yong;YAN Fa-Wang;FAN Zhong-Chao;LI Jin-Min;ZENG Yi-Ping;WANG Guo-Hong. Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces
[12]
ZHANG Li-Qing;ZHANG Chong-Hong;YANG Yi-Tao;YAO Cun-Feng;LI Bing-Sheng;JIN Yun-Fan;SUN You-Mei;SONG Shu-Jian. Surface Erosion of GaN Bombarded by Highly Charged 208 Pbq+ -Ions
[13]
ZHONG Min;SONG Zhi-Tang;LIU Bo;FENG Song-Lin;CHEN Bomy. Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device
[14]
LI Jun-Hong;WANG Cheng-Hao;XU Lian;XIE Shu. Pt/Ti Electrodes of PZT Thin Films Patterning by Novel Lift-Off Using ZnO as a Sacrificial Layer
[15]
ZHOU Xing-Fei;ZHANG Yi;WANG Hua-Bin;NIU Dong-Xiao;WANGPei-Qing;HU Jun;. Humidity Effects on Imaging and Nanomanipulation of Individual DNA Molecules on HOPG Surface
2014, Vol. 31 
