Factors Affecting the Top Stripping of GaAs Microwire Array Fabricated by Inductively Coupled Plasma Etching
CHENG Ying, ZOU Ji-Jun** , WAN Ming, WANG Wei-Lu, PENG Xin-Cun, FENG Lin, DENG Wen-Juan, ZHU Zhi-Fu
Engineering Research Center of New Energy Technology and Equipment of Jiangxi Province, East China Institute of Technology, Nanchang 330013
Abstract ：The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20 min and 40 min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40 min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
收稿日期: 2014-12-18
出版日期: 2015-06-01
:
81.07.Gf
(Nanowires)
81.05.Ea
(III-V semiconductors)
81.65.Cf
(Surface cleaning, etching, patterning)
85.60.Gz
(Photodetectors (including infrared and CCD detectors))
引用本文:
. [J]. 中国物理快报, 2015, 32(5): 58102-058102.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/32/5/058102
或
https://cpl.iphy.ac.cn/CN/Y2015/V32/I5/58102
[1] Morton K J, Nieberg G, Bai S f and Chou S Y 2008 Nanotechnology 19 345301 2000 Proc. SPIE 4128 46 2008 Appl. Phys. Lett. 92 241107 2002 J. Vac. Sci. Technol. B 20 2721 2009 J. Appl. Phys. 106 054907 2007 J. Appl. Phys. 102 024904 2014 Chin. Phys. Lett. 31 056101 2012 Chin. Phys. Lett. 29 118103 2013 Chin. Phys. B 22 066101 2007 Appl. Phys. Lett. 90 043115 2006 J. Appl. Phys. 100 094305 2010 Chin. Phys. Lett. 27 046101 2007 J. Cryst. Growth 298 625 2007 J. Appl. Phys. 101 034313 2001 Appl. Phys. Lett. 79 3335 2003 Adv. Mater. 15 416 2010 Thin Solid Films 518 6488 2012 Chin. Phys. Lett. 29 036105 1999 Appl. Surf. Sci. 143 174
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
YU Zhi-Guo, CHEN Peng YANG Guo-Feng, LIU Bin, XIE Zi-Li, XIU Xiang-Qian, WU Zhen-Long, XU Feng, XU Zhou, HUA Xue-Mei, HAN Ping, SHI Yi ZHANG Rong, ZHENG You-Dou. Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells
[11]
FENG Qiu-Ju**;JIANG Jun-Yan;TAO Peng-Cheng;LIU Shuang;XU Rui-Zhuo;LI Meng-Ke;SUN Jing-Chang
. The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods
[12]
WEI Ang;WANG Zhao;PAN Liu-Hua;LI Wei-Wei;XIONG Li;DONG Xiao-Chen**;HUANG Wei**
. Room-Temperature NH Gas Sensor Based on Hydrothermally Grown ZnO Nanorodswei-huang@njupt.edu.cn
[13]
LIU Zhan-Hui;XIU Xiang-Qian**;YAN Huai-Yue;ZHANG Rong;XIE Zi-Li;HAN Ping;SHI Yi;ZHENG You-Dou
. Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy
[14]
BIAN Fei;WANG Rui;YANG Huai-Xin;ZHANG Xin-Zheng;LI Jian-Qi;XU Hong-Xing;XU Jing-Jun;ZHAO Ji-Min. Laser-Driven Silver Nanowire Formation: Effect of Femtosecond Laser Pulse Polarization
[15]
YE Xian;HUANG Hui;REN Xiao-Min;YANG Yi-Su;GUO Jing-Wei;HUANG Yong-Qing;WANG Qi. Growth of Pure Zinc Blende GaAs Nanowires: Effect of Size and Density of Au Nanoparticles
2015, Vol. 32 
