中国物理快报  2012, Vol. 29 Issue (7): 78501-078501    DOI: 10.1088/0256-307X/29/7/078501
  CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 本期目录 | 过刊浏览 | 高级检索 |
Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells
YU Zhi-Guo1, CHEN Peng1,2** YANG Guo-Feng1, LIU Bin1, XIE Zi-Li1, XIU Xiang-Qian1, WU Zhen-Long2, XU Feng2, XU Zhou2, HUA Xue-Mei1, HAN Ping1, SHI Yi1 ZHANG Rong1, ZHENG You-Dou1
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009
Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells
YU Zhi-Guo1, CHEN Peng1,2** YANG Guo-Feng1, LIU Bin1, XIE Zi-Li1, XIU Xiang-Qian1, WU Zhen-Long2, XU Feng2, XU Zhou2, HUA Xue-Mei1, HAN Ping1, SHI Yi1 ZHANG Rong1, ZHENG You-Dou1
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009