Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates
KONG Xin, WEI Ke, LIU Guo-Guo, LIU Xin-Yu**
Microwave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates
KONG Xin, WEI Ke, LIU Guo-Guo, LIU Xin-Yu**
Microwave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated. The devices with a gate length of 160 nm and a gate periphery of 2×75 µm exhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics, compared with conventional HEMTs. Furthermore, the extrinsic transconductance of an MOSHEMT is 237.2 mS/mm, only 7% lower than that of Schottky-gate HEMT. An extrinsic current gain cutoff frequency fT of 65 GHz and a maximum oscillation frequency fmax of 123 GHz are deduced from rf small signal measurements. The high fmax demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies.
Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are fabricated. The devices with a gate length of 160 nm and a gate periphery of 2×75 µm exhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics, compared with conventional HEMTs. Furthermore, the extrinsic transconductance of an MOSHEMT is 237.2 mS/mm, only 7% lower than that of Schottky-gate HEMT. An extrinsic current gain cutoff frequency fT of 65 GHz and a maximum oscillation frequency fmax of 123 GHz are deduced from rf small signal measurements. The high fmax demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies.
KONG Xin, WEI Ke, LIU Guo-Guo, LIU Xin-Yu. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates[J]. 中国物理快报, 2012, 29(7): 78502-078502.
KONG Xin, WEI Ke, LIU Guo-Guo, LIU Xin-Yu. Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates. Chin. Phys. Lett., 2012, 29(7): 78502-078502.
2012, Vol. 29 
