A Method for Preparation of Ordered Porous Silicon Based on a 2D SiO$_{2}$ Template
Ying Wu1 , Xiao-Xia Zhai2 , Cong-Mian Zhen1** , Xiao-Wei Liu1 , Li Ma1 , Deng-Lu Hou1
1 Hebei Advanced Thin Films Laboratory, Department of Physics, Hebei Normal University, Shijiazhuang 0500242 Shijiazhuang Institute of Technology, Shijiazhuang 050228
Abstract ：A new method for fabricating ordered porous silicon is reported. A two-dimensional silica nanosphere array is used as a template with a hydrofluoric acid–hydrogen peroxide solution for etching the nanospheres. The initial diameter and distribution of the holes in the resulting porous silicon layer are determined by the size and distribution of the silica nanospheres. The corrosion time can be used to control the depths of the holes. It is found that the presence of a SiO$_{2}$ layer, formed by the oxidation of the rough internal surface of the hole, is the primary reason allowing the corrosion to proceed. Ultraviolet reflection and thermal conductivity measurements show that the diameter and distribution of the holes have a great influence on properties of the porous silicon.
收稿日期: 2016-01-06
出版日期: 2016-05-31
:
81.65.Cf
(Surface cleaning, etching, patterning)
78.67.Rb
(Nanoporous materials)
72.15.Jf
(Thermoelectric and thermomagnetic effects)
[1] Lin S Y, Fleming J G, Hetherington D L, Smith B K, Biswas R, Ho K M, Sigalas M M, Zubrzycki W, Kurtz S R and Bur J 1998 Nature 394 251 [2] Suezaki T, Chen J I L, Hatayama T, Fuyuki T and Ozin G A 2010 Appl. Phys. Lett. 96 242102 [3] Cui Y, Wei Q, Park H and Lieber C M 2001 Science 293 1289 [4] Patolsky F, Zheng G and Lieber C M 2006 Nat. Protoc. 1 1711 [5] Tang J, Wang H T, Lee D H, Fardy M, Huo Z, Russell T P and Yang P 2010 Nano Lett. 10 4279 [6] Masuda H, Yotsuya M and Ishida M 1998 Jpn. J. Appl. Phys. 37 L1090 [7] Grom G F, Lockwood D J, McCaffrey J P, Labbe H J, Fauchet P M, White B, Dinier J, Kovalev D and Koch F 2000 Nature 407 358 [8] Uhlir A 1956 Bell Syst. Tech. J. 35 333 [9] Chazalviel J N 2012 SpringerPlus 1 17 [10] Lehmann V 2002 Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications (Berlin: Wiley-VCH Verlag) chap 2 p 23 [11] F?ll H, Christophersen M, Carstensen J and Hasse G 2002 Mater. Sci. Eng. R 39 93 [12] Huang Z, Geyer N, Werner P, De Boor J and G?sele U 2011 Adv. Mater. 23 285 [13] Huang Z P, Shimizu T, Senz S, Zhang Z, Zhang X X, Lee W, Geyer N and G?sele U 2009 Nano Lett. 9 2519 [14] Wang X, Wu Y, Liu X W, Chen J Y, Zhen C M, Ma L and Hou D L 2015 J. Porous Mater. 22 131 [15] Li M, Lam J W Y, Mahtab F, Chen S J, Zhang W J, Hong Y N, Xiong J, Zheng Q C and Tang B Z 2013 J. Mater. Chem. B 1 676 [16] St?ber W and Fink A 1968 J. Colloid Interface Sci. 26 62 [17] Peng K Q, Wu Y, Fang H, Zhong X Y, Xu Y and Zhu J 2005 Angew. Chem. Lnt. Ed. 44 2737 [18] Harraz F A, Salem A M, Mohamed B A, Kandil A and Lbrahim A 2013 Appl. Surf. Sci. 264 391 [19] Lin Y R, Lai K Y, Wang H P and He J H 2010 Nanoscale 2 2765 [20] Giuseppe R, Keivan E, Strubbe A, David B and Kolpak M 2016 Phys. Rev. B 93 035408 [21] Hopkins P E, Reinke C M, Su M F, Olsson III R H, Shaner E A, Leseman Z C, Serrano J R, Phinney L M and El-Kady I 2011 Nano Lett. 11 107 [22] Petermann N, Stein N, Schierning G, Theissmann R, Stoib B, Brandt M S, Hecht C, Schulz C and Wiggers H 2011 J. Phys. D: Appl. Phys. 44 174034
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
YU Zhi-Guo, CHEN Peng YANG Guo-Feng, LIU Bin, XIE Zi-Li, XIU Xiang-Qian, WU Zhen-Long, XU Feng, XU Zhou, HUA Xue-Mei, HAN Ping, SHI Yi ZHANG Rong, ZHENG You-Dou. Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells
[7]
LI Jian-Hua;YU Bo-Ming;ZOU Ming-Qing. A Model for Fractal Dimension of Rough Surfaces
[8]
LIU Xiao-Bing;JIA Xiao-Peng;MA Hong-An;HAN Wei;GUO Xin-Kai;JIA Hong-Sheng. HPHT Synthesis of High-Quality Diamond Single Crystals with Micron Grain Size
[9]
PEI Xiao-Jiang;GUO Li-Wei;WANG Xiao-Hui;WANG Yang;JIA Hai-Qiang;CHEN Hong;ZHOU Jun-Ming. Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate
[10]
GAO Hai-Yong;YAN Fa-Wang;FAN Zhong-Chao;LI Jin-Min;ZENG Yi-Ping;WANG Guo-Hong. Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces
[11]
ZHANG Li-Qing;ZHANG Chong-Hong;YANG Yi-Tao;YAO Cun-Feng;LI Bing-Sheng;JIN Yun-Fan;SUN You-Mei;SONG Shu-Jian. Surface Erosion of GaN Bombarded by Highly Charged 208 Pbq+ -Ions
[12]
ZHONG Min;SONG Zhi-Tang;LIU Bo;FENG Song-Lin;CHEN Bomy. Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device
[13]
LI Jun-Hong;WANG Cheng-Hao;XU Lian;XIE Shu. Pt/Ti Electrodes of PZT Thin Films Patterning by Novel Lift-Off Using ZnO as a Sacrificial Layer
[14]
ZHOU Xing-Fei;ZHANG Yi;WANG Hua-Bin;NIU Dong-Xiao;WANGPei-Qing;HU Jun;. Humidity Effects on Imaging and Nanomanipulation of Individual DNA Molecules on HOPG Surface
[15]
ZHONG Fei;QIU Kai;LI Xin-Hua;YIN Zhi-Jun;XIE Xin-Jian;WANG Yang;JI Chang-Jian;CAO Xian-Cun;HAN Qi-Feng;CHEN Jia-Rong;WANG Yu-Qi. Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy
2016, Vol. 33 
