Band Alignment and Band Gap Characterization of La2 O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering
LIU Qi-Ya1,2 , FANG Ze-Bo2** , JI Ting3** , LIU Shi-Yan2 , TAN Yong-Sheng2 , CHEN Jia-Jun1 , ZHU Yan-Yan2
1 College of Physics and Electronic Information, China West Normal University, Nanchong 6370022 Department of Physics, Shaoxing University, Shaoxing 3120003 Key Laboratory of Advanced Transducers and Intelligent Control System, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024
Abstract ：La2 O3 films are grown on Si (100) substrates by the radio-frequency magnetron sputtering technique. The band alignment of the La2 O3 /Si heterojunction is analyzed by the x-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of La2 O3 films to Si substrates are found to be 2.40±0.1 and 1.66±0.3 eV, respectively. Based on O 1s energy loss spectrum analysis, it can be noted that the energy gap of La2 O3 films is 5.18±0.2 eV, which is confirmed by the ultra-violet visible spectrum. According to the suitable band offset and large band gap, it can be concluded that La2 O3 could be a promising candidate to act as high-k gate dielectrics.
收稿日期: 2013-09-09
出版日期: 2014-02-28
引用本文:
. [J]. 中国物理快报, 2014, 31(2): 27702-027702.
2 O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering. Chin. Phys. Lett., 2014, 31(2): 27702-027702.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/2/027702
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I2/27702
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2014, Vol. 31 
