Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films
LIU Xiao-Bing1, MENG Jian-Wei1, JIANG An-Quan1**, WANG Jian-Lu2
1State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 2National Laboratory Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films
LIU Xiao-Bing1, MENG Jian-Wei1, JIANG An-Quan1**, WANG Jian-Lu2
1State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 2National Laboratory Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
摘要The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene) thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer. We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization. Unexpectedly, the non-ferroelectric capacitance reduces by more than 71% with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization, which suggests the thickening of the above capacitive layers with enhanced domain switching speed.
Abstract：The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene) thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer. We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization. Unexpectedly, the non-ferroelectric capacitance reduces by more than 71% with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization, which suggests the thickening of the above capacitive layers with enhanced domain switching speed.
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2011, Vol. 28 
